IEICE TRANSACTIONS ON ELECTRONICS E100C(1) 108-111 2017年1月 [査読有り]
We prepared alumina passivation films for p-type silicon substrates by sol-gel wet process mainly using aluminum isopropoxide (Al(O-i-Pr)(3)) as a precursor material. The precursor solution was spin-coated onto p-type silicon substrates and then c...
Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics 34(5) 2016年9月 [査読有り]
The authors have investigated a process for randomly texturing single- and multicrystalline Si solar cells by plasmaless dry etching with a chlorine trifluoride gas. Although the reflectance of as-textured surfaces was easily reduced to below 10% ...
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B 34(5) 051401-1-051401-7 2016年9月 [査読有り]
The authors have investigated a process for randomly texturing single-and multicrystalline Si solar cells by plasmaless dry etching with a chlorine trifluoride gas. Although the reflectance of as-textured surfaces was easily reduced to below 10% a...
We prepared alumina passivation films deposited by a sol-gel wet process for silicon substrates. Aluminum acetylacetonate was used as a precursor, and the solution was spin-coated onto silicon substrates. Calcination temperature dependence of the ...