江龍 修

We made an off-axis surface of SiC with the chemical-mechanical polishing (CMP) method to examine the influence of an atomic step on the electronic properties. It became clear that processing pressure had the threshold in the electric field that let the removal of the atom accelerate using the abrasive of the piezoelectric particles. The electric charge distribution of the SiC surface affects the removal rate of SiC. The conductive atomic force microscopy (CAFM) method is effective technique to examine processing mechanism of the materials surface.

GaAs epitaxial layers were grown by organometallic vapor phase epitaxy (OMVPE) using TEGa and TBAs over a wide range of growth temperature (350°C-700°C) and V/III ratio (2-9). GaAs with excellent surface morphology was obtained when the growth temperature was higher than 600°C. The GaAs surface tended to be rough with decreasing growth temperature below 550°C. When the growth temperature was decreased to 400°C, p-type GaAs was obtained with specular surface. The hole concentration increased with decreasing V/III ratio. The hole concentration was as high as 5.5×10¹⁷ cm^–3 for the sample grown at 400°C with V/III ratio = 2.