V. Ferlet-Cavrois   D. Kobayashi   D. McMorrow   J. R. Schwank   H. Ikeda   A. Zadeh   O. Flament   K. Hirose   
IEEE TRANSACTIONS ON NUCLEAR SCIENCE 57(4) 1811-1819 2010年8月
Significant floating body effects were measured in 0.2 m fully-depleted SOI resulting in large amounts of single event transient (SET) broadening, i.e., SET duration stretching. The transient response of single transistors and the propagation of s...
V. Ferlet-Cavrois   D. Kobayashi   D. McMorrow   J. R. Schwank   H. Ikeda   A. Zadeh   O. Flament   K. Hirose   
IEEE TRANSACTIONS ON NUCLEAR SCIENCE 57(4) 1811-1819 2010年8月
Significant floating body effects were measured in 0.2 m fully-depleted SOI resulting in large amounts of single event transient (SET) broadening, i.e., SET duration stretching. The transient response of single transistors and the propagation of s...
K. Tsugawa   H. Noda   K. Hirose   H. Kawarada   
Physical Review B - Condensed Matter and Materials Physics 81(4) 045303 2010年1月
Chemical trends of Schottky barrier heights of ten kinds of metal contacts on hydrogen-terminated diamond (001) surfaces are estimated from the temperature dependence of their current-voltage characteristics. In addition to the measurements, the i...
K. Tsugawa   H. Noda   K. Hirose   H. Kawarada   
Physical Review B - Condensed Matter and Materials Physics 81(4) 045303 2010年1月
Chemical trends of Schottky barrier heights of ten kinds of metal contacts on hydrogen-terminated diamond (001) surfaces are estimated from the temperature dependence of their current-voltage characteristics. In addition to the measurements, the i...
Y. Yanagawa, K. Hirose, H. Saito, D. Kobayashi, S. Fukuda, S. Ishii, D. Takahashi, K. Yamamoto, and Y. Kuroda, IEEE Transactions on Nuclear Science, 53 (6) pp. 3575-3578 (2006)
論文タイトル
Direct measurement of SET pulse widths in 0.2-μm SOI logic cells irradiated by heavy ions
T. Makino, D. Kobayashi, K. Hirose, Y. Yanagawa, H. Saito, D. Takahashi, S. Ishii, M. Kusano, S. Onoda, T. Hirao, and T. Ohshima, IEEE Transactions on Nuclear Science, 56 (1) pp. 202-207 (2009)
論文タイトル
LET dependence of single event transient pulse-widths in SOI logic cell