Materials to be used in the space environment have to withstand extreme conditions, particularly with respect to cosmic particle irradiation. We report robust stability and high tolerance of organolead trihalide perovskite solar cells against high...
The breakdown electric field of several SiC polymorphs has been investigated theoretically using a concept of “recovery rate,” which is obtained by first principles calculations. A good relationship between the experimental breakdown electric fiel...
IEEE Transactions on Nuclear Science 65(1) 346-353 2018年1月 [査読有り]
An interesting multiple-cell upset (MCU) phenomenon in silicon-on-insulator (SOI) static random access memorys (SRAMs) featuring long lines of more than ten flipped cells is studied. Such an abnormal MCU phenomenon was recently observed for back-b...
IEEE Transactions on Nuclear Science 65(1) 523-532 2018年1月 [査読有り]
Silicon-on-insulator technology is often used to develop high-reliability devices with low sensitivity to single-event upsets or soft errors. Its key component, the buried-oxide (BOX) layer, is now thinned down to 10 nm. This thinning enables tran...
Kazuyuki Hirose   Daisuke Kobayashi   Taichi Ito   Tetsuo Endoh   
JAPANESE JOURNAL OF APPLIED PHYSICS 56(8) 2017年8月
The memory reliability of magnetic tunnel junctions has been examined from the aspect of their potential use in disaster-resilient computing. This computing technology requires memories that can keep stored information intact even in power-cut eme...
This paper presents analysis results for the onorbit performance of a solar array paddle of the X-ray astronomy satellite Suzaku. The current generated by the solar array was decreasing significantly for approximate one year after mid-2011. We est...
Y. Yanagawa, K. Hirose, H. Saito, D. Kobayashi, S. Fukuda, S. Ishii, D. Takahashi, K. Yamamoto, and Y. Kuroda, IEEE Transactions on Nuclear Science, 53 (6) pp. 3575-3578 (2006)
論文タイトル
Direct measurement of SET pulse widths in 0.2-μm SOI logic cells irradiated by heavy ions
T. Makino, D. Kobayashi, K. Hirose, Y. Yanagawa, H. Saito, D. Takahashi, S. Ishii, M. Kusano, S. Onoda, T. Hirao, and T. Ohshima, IEEE Transactions on Nuclear Science, 56 (1) pp. 202-207 (2009)
論文タイトル
LET dependence of single event transient pulse-widths in SOI logic cell