katsuno kiiko

Predicting the composition of a solid solution during its growth has been one of the principal themes in the study of crystal growth. The interface kinetics, which influences the element partitioning between a crystal and mother phases, has been poorly understood in spite of many theoretical and experimental studies. In the present paper, we introduce our recent study of the Monte Carlo simulation which was applied to clarify the essential processes for the incorporation of atoms on growth layers of a binary ideal solid solution growing from its vapor. The simulation reveals that the detachment of atoms from terrace sites, especially around kink sites, strongly controls the bulk composition of a growing solid solution.