Y Saito   M Aomori   H Kuwano   
JOURNAL OF APPLIED PHYSICS 81(2) 754-757 1997年1月
The influence of the hydrogenation treatment on the conduction mechanism in the undoped polycrystalline silicon films near room temperature was investigated. The two current components are predicted from the temperature dependence of the conductiv...
Y Saito   H Imai   Y Sugita   T Ito   
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS 35(12A) 6239-6240 1996年12月
Re-crystallization of implanted layers and electrical activation of implanted As atoms by vacuum-ultraviolet (VUV) light irradiation in silicon substrates below 470 degrees C were investigated by means of sheet resistance measurements and reflecti...
JOURNAL OF THE ELECTROCHEMICAL SOCIETY 143(11) 3670-3674 1996年11月
Adsorption of tungsten hexafluoride on hydrogen-terminated silicon and silicon dioxide surfaces was investigated by in situ x-ray photoelectron spectroscopy in order to understand the selectivity loss occurring for chemical vapor deposition (CVD) ...