JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS 35(3) 1846-1849 1996年3月
An accelerated desorption of fluorine adsorbates from silicon surfaces is induced by atomic deuterium (or hydrogen) exposure at low substrate temperature. The reaction processes have been investigated with an situ Auger analysis and thermally stim...
Y Sugita   Y Saito   Y Nara   
OPTOELECTRONICS-DEVICES AND TECHNOLOGIES 11(1) 113-126 1996年3月
We have examined new etching methods using vacuum ultraviolet (VUV) light for application to fabrication of semiconductor devices. We have successfully carried out highly selective and highly anisotropic etching of silicon dioxide using anhydrous ...
Direct oxynitridation of silicon is performed by remote-plasma excited nitrogen and oxygen gaseous mixtures at 550 degrees C. Nitrogen atoms are mainly incorporated near the SiO2-Si interfaces with Auger electron spectroscopy measurements. We have...
Yoji Saito   Hideo Imai   Yoshihiro Sugita   Takashi Ito   
Japanese Journal of Applied Physics 34(12) 6882-6885 1995年
Vacuum-ultraviolet (VUV) light induced etching of thermally grown silicon dioxide films was investigated near room temperature. We used synchrotron radiation as a VUV light source and anhydrous-hydrogen-fluoride as anetching gas. The silicon dioxi...
Extraction of fluorine adsorbates on silicon surfaces is induced by exposure to atomic hydrogen. The decay process of fluorine has been investigated with Auger electron microscopy and is discussed in terms of chemical kinetics. The desorption rate...