JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS 41(3A) 1515-1518 2002年3月
Several percent of nitrogen was incorporated only near the top surfaces of thermally grown oxides, by surface fluorination at room temperature followed by an atomic nitrogen treatment at 550degreesC. The dependences of the nitrogen content and the...
Silicon substrates and thermally grown oxide films were exposed to ClF3 gas at various temperatures between room temperature and 600degreesC. Above room temperature, the activation energy of the silicon etch rate is 0.18 eV. The activation energy ...
We annealed ultrathin silicon oxynitride films at high temperatures and in high vacuum, and investigated a role of nitrogen in structural stability with angle resolved X-ray photoelectron spectroscopy. The desorption rate of oxygen from the oxynit...
Y Saito   H Yamazaki   S Mouri   
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS 19(1) 38-40 2001年1月
We propose reactive gases, which can be easily decomposed, as the etching gas to avoid "greenhouse effects." In this article, the etching reaction between silicon and the trifluoro-acetyl-fluoride (CF3COF) gas is demonstrated, using a remote plasm...