JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS 37(10A) L1172-L1174 1998年10月
Nitrogen incorporation into oxide surfaces is required to prevent the penetration of boron from the polycrystalline silicon gate to the substrate in metal-oxide-semiconductor devices. We incorporate nitrogen only into the oxide surfaces by fluorin...
In recent years, silicon oxynitride films have drawn attention as high-quality dielectrics, with decreasing the feature size in the integrated circuits. In this study, we try direct oxynitridation of silicon by remote-plasma-excited nitrogen and o...
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS 37(5A) L536-L538 1998年5月
We demonstrate to the acceleration of the moistureless etching reaction between the silicon native oxide and the anhydrous hydrogen fluoride (AHF) gas, using remote-plasma-excited Ar gas at room temperature. The etching reaction is significantly e...
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS 36(11A) L1466-L1469 1997年11月
The adsorption of anhydrous hydrogen fluoride (AHF) on the surfaces of silicon native oxide was investigated by in situ X-ray photoelectron spectroscopy (XPS) in order to understand the reaction between HF and the oxide films at room temperature. ...