Nakamura Shouhei, MATSUO Naoto, HEYA Akira, YAMANA Kazushige, TAKADA Tadao, FUKUYAMA Masataka, YOKOYAMA Shin
Technical report of IEICE. SDM, 114(360) 17-20, Dec 12, 2014
The carrier behavior in DNA was examined using the DNA channel/SiO_2/Si gate structure, hi this case, electrodes with a gap of 120 nm using a substrate Si was prepared and DNA was fixed between the electrodes. The dI_D/dV_D shows the maximum value at the drain voltage of 0.7 V. This phenomenon relates to the trapped and detrapped electrons in DNA. The electrons were trapped by guanine-base, and they were detrapped by the electric field in the channel. In the case of p^+Si, the holes of majority earners are emitted from the drain electrodes by recombination of electrons and holes in the DNA channel thought the mass action law.