The charge retention mechanism of the lambda-DNA molecules with 400 bp (136 nm) are examined. The DNA solution was dropped on the Si source and drain electrodes with the gap of 120 nm. The change of the refresh characteristics by applying the nega...
Akira Heya Naoto Matsuo Kazuhiro Kanda Takashi Noguchi
2014 INTERNATIONAL WORKSHOP ON JUNCTION TECHNOLOGY (IWJT) 23-26 2014年 [査読有り]
Novel activation method of B dopant using soft X-ray undulator was examined. As the photon energy of irradiated soft X-ray closed to the energy of core level of Si 2p, the activation ratio was increased. The effect of soft X-ray irradiation on B a...
2014 21ST INTERNATIONAL WORKSHOP ON ACTIVE-MATRIX FLATPANEL DISPLAYS AND DEVICES (AM-FPD) 193-194 2014年 [査読有り]
Novel ultra-high frequency device using graphene on pentacene (GOP) structure is proposed. In the GOP, charges transfer from graphene with high mobility to pentacene with low mobility by gate voltage and then the charges in pentacene are transferr...
2014 IEEE INTERNATIONAL MEETING FOR FUTURE OF ELECTRON DEVICES, KANSAI (IMFEDK) 2014年 [査読有り]
The carrier behavior in DNA was examined using the DNA channel/SiO2/Si gate structure. The source/drain electrodes with a gap of 120 nm etching a SOI film was prepared and DNA was fixed between the electrodes. The dID/dVD shows the maximum value a...
2014 21ST INTERNATIONAL WORKSHOP ON ACTIVE-MATRIX FLATPANEL DISPLAYS AND DEVICES (AM-FPD) 173-175 2014年 [査読有り]
The carrier behavior in DNA was examined using the DNA channel/SiO2/Si gate structure. In this case, electrodes with a gap of 120 nm using a substrate Si was prepared and DNA was fixed between the electrodes. The dI(D)/dV(D) shows the maximum valu...
大学本部
工学研究科