原田哲男

研究者氏名	原田哲男
	ハラダテツヲ
URL
所属	兵庫県立大学
部署	高度産業科学技術研究所
職名	准教授
学位	博士（工学）
J-Global ID	201801018052844104

研究キーワード

EUVリソグラフィー ,軟Ｘ線光工学

研究分野

エネルギー / 量子ビーム科学 /

経歴

2019年4月

現在

兵庫県立大学高度産業科学技術研究所准教授

2008年10月

2019年3月

兵庫県立大学高度産業科学技術研究所助教

2008年4月

2008年9月

東北大学多元物質科学研究所教育研究支援者

2007年4月

2008年3月

東北大学多元物質科学研究所研究支援者

学歴

2003年10月

2007年3月

東北大学大学院工学研究科応用物理学専攻

2001年4月

2003年9月

東北大学大学院工学研究科応用物理学専攻

1997年4月

2001年3月

東北大学工学部

論文

12 3 4 5 >

CNT-based pellicles for the next generation of EUV scanners

Takahiro Ueda Marcio D. Lima Tetsuo Harada Takeshi Kondo

JAPANESE JOURNAL OF APPLIED PHYSICS 62(SG) 2023年6月

There has been growing interest among advanced semiconductor manufacturers in pellicles that can withstand conditions in extreme ultraviolet (EUV) photolithography. The pellicle must have high mechanical toughness, high transparency in EUV radiati...

The X-ray absorption spectroscopy analysis of the negative-Tone PAG bound resist

Shinji Yamakawa Tetsuo Harada Takeo Watanabe

Proceedings of SPIE - The International Society for Optical Engineering 12750 2023年

Development of new EUV resists is required for next-generation EUV lithography. A resist in which a large amount of photoacid generator (PAG) is introduced into the polymer side chain has been reported as a high-resolution nonchemically amplified ...

Comparison of Photoresist Sensitivity between KrF, EB and EUV Exposure

Yosuke Ohta Atsushi Sekiguchi Shinji Yamakawa Tetsuo Harada Takeo Watanabe Hiroki Yamamoto

Journal of Photopolymer Science and Technology 35(1) 49-54 2022年12月 [査読有り]

It has been reported that the good correlation in sensitivity and resolution between EUV exposure and EB exposure because of the similar mechanism of the photochemical-reaction in photoresists during exposure. However, in the early stages of EUV r...

Grazing-Incidence Soft-X-ray Scattering for the Chemical Structure Size Distribution Analysis in EUV Resist

Atsunori Nakamoto Shinji Yamakawa Tetsuo Harada Takeo Watanabe

Journal of Photopolymer Science and Technology 35(1) 61-65 2022年12月 [査読有り]

In extreme ultraviolet lithography (EUVL), it is required to develop EUV resist which has low line width roughness (LWR) for the further miniaturization of circuit pattern. In order to reduce LWR, it is necessary to analyze and control the chemica...

R&D Activities of EUV Lithography at NewSUBARU, and Possibility of Beyond EUV

Takeo Watanabe Tetsuo Harada Shinji Yamakawa

Optics InfoBase Conference Papers 2022年

The R&D of basic technologies such as mask, resist, optical element, optics. have been carried out at NewSUBARU synchrotron light facility since 1996. EUV Lithography started use in production from 2019 for 7 nm node logic devices and from 2020 fo...