Japanese Journal of Applied Physics 62(SM) 2023年11月
HfO2-based ferroelectric materials do not necessarily require high-temperature annealing for crystallization, making them attractive for applications in transparent electronic devices on plastic or glass substrate. In this study, (Hf, Zr)O2 (HZO) ...
Japanese Journal of Applied Physics 62(SM) 2023年11月
Bismuth ferrite (BiFeO3: BFO) is a multiferroic material that exhibits ferroelectricity, antiferromagnetism, and ferroelasticity simultaneously at RT. BFO holds great promise as a ferroelectric semiconductor because of its ability to alter conduct...
Seiji Nakashima Tatsuya Ito Takuo Ohkochi Hironori Fujisawa
Japanese Journal of Applied Physics 61 2022年11月 [査読有り]
Recently, ferroelectric semiconductors has become a subject of interest with regard to potential applications in novel electronic and opto-electric devices. One of the most important aspects of employing these materials is band modulation based on...
Japanese Journal of Applied Physics 60(SF) 2021年11月 [査読有り]
Ferroelectric gate-all-around (GAA) transistors with a nanowire (NW) channel standing vertically on the substrate would be a potential breakthrough to overcome limitations in the high-integration of ferroelectric memories. In the present study, we...
Japanese Journal of Applied Physics 60 2021年11月 [査読有り]
This work demonstrates an enhancement of the external quantum efficiency (η ex) associated with the bulk photovoltaic effect (BPVE) resulting from the ballistic conduction of hot carriers in indium tin oxide/Mn-doped BiFeO3 (BFMO)/SrRuO3 capacitor...
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