International Workshop on EUV Lithography, Best Paper Award,R&D of EUV Lithography渡邊 健夫
2008年6月
International Workshop on EUV Lithography, Best Poster Award 1st Place,EUV interference lithography employing 11-m long undulator as a light source渡邊 健夫
JOURNAL OF PHOTOPOLYMER SCIENCE AND TECHNOLOGY 31(2) 221-225 2018年 [査読有り]
We synthesized tannic acid derivatives with pendant cyclohexyl acetal moieties (TA-CVEn), butyl acetal moieties (TA-BVEn), and adamantyl ester moieties (TA-AD(n)) by the reaction of tannnic acid (TA) with cyclohexyl vinyl ether (CVE), butyl vinyl ...
Proceedings of 2017 7th International Conference on Integrated Circuits, Design, and Verification, ICDV 2017 2017- 2-7 2017年12月 [査読有り]
Extreme ultraviolet (EUV) lithography which can utilize the single resist process is the most promising lithographic technology for semiconductor electronic devices such as MPU, memory. In the International Electron Device Meeting (IEDM) 2016 whic...
JAPANESE JOURNAL OF APPLIED PHYSICS 56(6) 06GB01 2017年6月 [査読有り]
In extreme-ultraviolet (EUV) lithography, the development of a review apparatus for the EUV mask pattern at an exposure wavelength of 13.5nm is required. The EUV mask is composed of an absorber pattern and a Mo/Si multilayer on a glass substrate. ...