International Workshop on EUV Lithography, Best Paper Award,R&D of EUV Lithography渡邊 健夫
2008年6月
International Workshop on EUV Lithography, Best Poster Award 1st Place,EUV interference lithography employing 11-m long undulator as a light source渡邊 健夫
PHOTOMASK JAPAN 2017: XXIV SYMPOSIUM ON PHOTOMASK AND NEXT-GENERATION LITHOGRAPHY MASK TECHNOLOGY 10454 2017年
In extreme ultraviolet (EUV) lithography, development of review tools for EUV mask pattern and phase defect at working wavelength of 13.5 nm is required. The EUV mask is composed of an absorber pattern (50-70 nm thick) and Mo/Si multilayer (280 nm...
IEEJ Transactions on Fundamentals and Materials 137(5) 260-264 2017年 [査読有り]
For evaluation of defects on extreme ultraviolet (EUV) masks at the blank state of manufacturing, we developed a micro coherent EUV scatterometry microscope (micro-CSM). The illumination source is coherent EUV light with a 140-nm focus diameter on...
INTERNATIONAL CONFERENCE ON EXTREME ULTRAVIOLET LITHOGRAPHY 2017 10450 2017年 [査読有り]
In this paper, we designed the synthesis of negative-type molecular resist materials for EB and EUVL exposure tools, and their properties were examined. The resist materials for EUVL have been required showing higher sensitivity for high throughpu...
JOURNAL OF PHOTOPOLYMER SCIENCE AND TECHNOLOGY 30(1) 109-112 2017年 [査読有り]
In this study, we evaluated the outgassing generated from EUV resist which included metal oxide nanoparticles during electron irradiation. We prepared two types of samples including ZrO2 and TeO2, and a sample without including metal oxide, respec...
EXTREME ULTRAVIOLET (EUV) LITHOGRAPHY VIII 10143 2017年 [査読有り]
In this study, we evaluated the outgassing generated from EUV resist which included metal oxide nanoparticles during electron irradiation. We prepared two types of samples including ZrO2 and TeO2, and a sample without including metal oxide, respec...