International Workshop on EUV Lithography, Best Paper Award,R&D of EUV Lithography渡邊 健夫
2008年6月
International Workshop on EUV Lithography, Best Poster Award 1st Place,EUV interference lithography employing 11-m long undulator as a light source渡邊 健夫
A. Sekiguchi   Y. Ohta   T. Harada   T. Watanabe   
Proceedings of SPIE - The International Society for Optical Engineering 12292 2022年
Our previous studies focused on ways to measure simulation parameters for EUV resists, including development parameters, Dill's C parameter, the diffusion length of PAG-derived acids, and parameters for deprotection reactions. Through EUV resist s...
Using a newly developed edge-support heat treatment method of polyimide, self-standing graphite thin films (GTFs) with a frame were prepared. The graphite basal plane in the GTF was oriented in the direction of the film surface, resulting in GTFs ...
Japanese Journal of Applied Physics 60(8) 087005-087005 2021年8月 [査読有り]
Extreme ultraviolet (EUV) lithography has recently been utilized as a high-volume manufacturing technology for advanced semiconductors. An EUV mirror can be easily contaminated in the existence of a residual hydrocarbon vapor gas inside an exposur...
IEEE TRANSACTIONS ON ELECTRON DEVICES 68(4) 2056-2063 2021年4月 [査読有り]
This article presents a prototype 22.4 mu m pixel pitch global shutter (GS) wide dynamic range (WDR) soft X-ray CMOS image sensor (sxCMOS). Backside-illuminated (BSI) pinned photodiodes with a 45-mu m thick Si substrate were introduced for low noi...