International Workshop on EUV Lithography, Best Paper Award,R&D of EUV Lithography渡邊 健夫
2008年6月
International Workshop on EUV Lithography, Best Poster Award 1st Place,EUV interference lithography employing 11-m long undulator as a light source渡邊 健夫
Journal of Photopolymer Science and Technology 34(1) 111-115 2021年 [査読有り]
In extreme ultraviolet (EUV) lithography development, the reduction of line width roughness (LWR) is a one of the significant issues. It has been reported that the LWR of photoacid generator (PAG) bounded resist is lower than that of PAG blended r...
Journal of Photopolymer Science and Technology 34(1) 105-110 2021年
Up to now, we have been researching methods for measuring the simulation parameters of EUV resist. These parameters include the development parameter, the Dill C parameter, the diffusion length of acid generated from PAG, and the deprotection reac...
Journal of Photopolymer Science and Technology 34(1) 49-53 2021年 [査読有り]
Extreme ultraviolet lithography was started to use for the production of 7-nm node-logic-semiconductor devices in 2019. And it was adapted to use for high volume manufacturing (HVM) of 5-nm logic devices in 2020. EUVL is required to be extended to...
Journal of Photopolymer Science and Technology 33(1) 45-51 2020年7月 [査読有り]
We examined the synthesis, physical properties, and resist properties of the various polymers and an oligomer containing fixed hole derived from calixarenes. By the condensation reaction of p-t-butylcalix[n]arene (n = 4 and 8) with 1,4-dichloro-2-...