International Workshop on EUV Lithography, Best Paper Award,R&D of EUV Lithography渡邊 健夫
2008年6月
International Workshop on EUV Lithography, Best Poster Award 1st Place,EUV interference lithography employing 11-m long undulator as a light source渡邊 健夫
JOURNAL OF PHOTOPOLYMER SCIENCE AND TECHNOLOGY 32(6) 805-810 2019年 [査読有り]
We examined the synthesis and resist properties of tellurium-containing molecular resist materials. By the condensation reaction of anisol, phenol, and 2-phenylphenol with tellurium tetrachloride (TeCl4), dichloro di(4-hydroxyphenyl) telluride (CH...
We synthesized various hyperbranched polyacetals poly(t-BCRA[4]-co-BVOC), poly(t-BCRA[4]-co-BVOP), poly(t-BCRA[4]-co-BVOXP), poly(t-BCRA[4]-co-BVBC), and poly(t-BCRA[4]-co-TVCH) by the polyaddition of C-(4-t-butylbenz)calix[4]resorcinarene (t-BCRA...
Electronics and Communications in Japan 101(3) 11-16 2018年3月 [査読有り]
For evaluation of defects on extreme ultraviolet (EUV) masks at the blank state of manufacturing, we developed a microcoherent EUV scatterometry microscope (micro-CSM). The illumination source is coherent EUV light with a 140-nm focus diameter on ...
Journal of Photopolymer Science and Technology 31(2) 257-260 2018年
In this study, we prepared the EUV metal resist, which included ZrO2 nano-particle and three type ligands as 2-methyl-2-propenoic acid (MAA), 2-methylpropanoic acid (IBA) and vinylbenzoic acid (VBA). Each resist was prepared by blending each mater...