International Workshop on EUV Lithography, Best Paper Award,R&D of EUV Lithography渡邊 健夫
2008年6月
International Workshop on EUV Lithography, Best Poster Award 1st Place,EUV interference lithography employing 11-m long undulator as a light source渡邊 健夫
INTERNATIONAL CONFERENCE ON EXTREME ULTRAVIOLET LITHOGRAPHY 2018 10809 2018年
We have developed the reflectometer to evaluate EUV mirrors and masks at BL-10 beamline of NewSUBARU synchrotron light facility. This reflectometer usually measures s-polarized reflectance. Reflectance of an EUV mirror is strongly depends on polar...
INTERNATIONAL CONFERENCE ON EXTREME ULTRAVIOLET LITHOGRAPHY 2018 10809 2018年
The resist thickness of EUV lithography is thin less than 50 nm. Since the most photon is not absorbed by the resist, the EUV chemical reaction is not occurred sufficiently. In order to increase chemical reaction, a resist should have a high-absor...
Proceedings of SPIE - The International Society for Optical Engineering 10583 2018年 [査読有り]
To improve EUV resist sensitivity, studies have sought to enhance EUV light absorption by adding metals characterized by high EUV light absorption to the resist polymer. This approach is intended to increase secondary electron emission, thereby en...