Takahiro Ueda   Marcio D. Lima   Tetsuo Harada   Takeshi Kondo   
JAPANESE JOURNAL OF APPLIED PHYSICS 62(SG) 2023年6月
There has been growing interest among advanced semiconductor manufacturers in pellicles that can withstand conditions in extreme ultraviolet (EUV) photolithography. The pellicle must have high mechanical toughness, high transparency in EUV radiati...
Proceedings of SPIE - The International Society for Optical Engineering 12750 2023年
Development of new EUV resists is required for next-generation EUV lithography. A resist in which a large amount of photoacid generator (PAG) is introduced into the polymer side chain has been reported as a high-resolution nonchemically amplified ...
Journal of Photopolymer Science and Technology 35(1) 49-54 2022年12月 [査読有り]
It has been reported that the good correlation in sensitivity and resolution between EUV exposure and EB exposure because of the similar mechanism of the photochemical-reaction in photoresists during exposure. However, in the early stages of EUV r...
Journal of Photopolymer Science and Technology 35(1) 61-65 2022年12月 [査読有り]
In extreme ultraviolet lithography (EUVL), it is required to develop EUV resist which has low line width roughness (LWR) for the further miniaturization of circuit pattern. In order to reduce LWR, it is necessary to analyze and control the chemica...
The R&D of basic technologies such as mask, resist, optical element, optics. have been carried out at NewSUBARU synchrotron light facility since 1996. EUV Lithography started use in production from 2019 for 7 nm node logic devices and from 2020 fo...