Proceedings of SPIE - The International Society for Optical Engineering 12292 2022年
Our previous studies focused on ways to measure simulation parameters for EUV resists, including development parameters, Dill's C parameter, the diffusion length of PAG-derived acids, and parameters for deprotection reactions. Through EUV resist s...
Extreme ultraviolet (EUV) lithography has recently been utilized as a high-volume manufacturing technology for advanced semiconductors. An EUV mirror can be easily contaminated in the existence of a residual hydrocarbon vapor gas inside an exposur...
Using a newly developed edge-support heat treatment method of polyimide, self-standing graphite thin films (GTFs) with a frame were prepared. The graphite basal plane in the GTF was oriented in the direction of the film surface, resulting in GTFs ...
IEEE TRANSACTIONS ON ELECTRON DEVICES 68(4) 2056-2063 2021年4月
This article presents a prototype 22.4 mu m pixel pitch global shutter (GS) wide dynamic range (WDR) soft X-ray CMOS image sensor (sxCMOS). Backside-illuminated (BSI) pinned photodiodes with a 45-mu m thick Si substrate were introduced for low noi...
Proceedings of SPIE - The International Society for Optical Engineering 11908 2021年
In 2019, EUV lithography technology with a wavelength of 13.5 nm was used for the mass production of semiconductor logic devices with 7 nm node. As with small feature size of electronic circuits in semiconductor device will be required in the futu...
大学本部
高度産業科学技術研究所