原田哲男

研究者氏名	原田哲男
	ハラダテツヲ
URL
所属	兵庫県立大学
部署	高度産業科学技術研究所
職名	准教授
学位	博士（工学）
J-Global ID	201801018052844104

研究キーワード

EUVリソグラフィー ,軟Ｘ線光工学

研究分野

エネルギー / 量子ビーム科学 /

経歴

2019年4月

現在

兵庫県立大学高度産業科学技術研究所准教授

2008年10月

2019年3月

兵庫県立大学高度産業科学技術研究所助教

2008年4月

2008年9月

東北大学多元物質科学研究所教育研究支援者

2007年4月

2008年3月

東北大学多元物質科学研究所研究支援者

学歴

2003年10月

2007年3月

東北大学大学院工学研究科応用物理学専攻

2001年4月

2003年9月

東北大学大学院工学研究科応用物理学専攻

1997年4月

2001年3月

東北大学工学部

論文

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Hydrogen damage and cleaning evaluation of Mo/Si multilayer using high-power EUV irradiation tool

Tetsuo Harada Ayato Ohgata Shinji Yamakawa Takeo Watanabe

Proceedings of SPIE - The International Society for Optical Engineering 11908 2021年

At EUV lithography, an EUV mirror can be easily contaminated with carbon. This carbon contamination causes the reflectance drop of the Mo/Si multilayer mirror. For the carbon-contamination cleaning, hydrogen gas is introduced at a pressure of a fe...

Fundamental research activities on EUV lithography at NewSUBARU synchrotron light facility

T. Watanabe T. Harada S. Yamakawa

Proceedings of SPIE - The International Society for Optical Engineering 11908 2021年

Since 2019, EUV lithography has started to be used for the mass production of 7-nm-node-logic devices. However, many significant issues on EUV lithography still remain in the fabrication of future devices. The technical issues are the development ...

Damage-less removal of surface contamination using atomic hydrogen generated on heated tungsten mesh

Akira Heya Tetsuo Harada Masahito Niibe Koji Sumitomo Takeo Watanabe

Proceedings of SPIE - The International Society for Optical Engineering 11908 2021年

An extreme ultraviolet (EUV) light with a wavelength of 13.5 nm has been introduced to 7 nm FinFET technology. Optical elements such as Mo/Si multilayer mirror in lithography equipment are contaminated with hydrocarbon during the EUV light irradia...

The Measurement of the Refractive Index n and k Value of the EUV Resist by EUV Reflectivity Measurement Method

Yosuke Ohta Atsushi Sekiguchi Tetsuo Harada Takeo Watanabe

JOURNAL OF PHOTOPOLYMER SCIENCE AND TECHNOLOGY 34(1) 105-110 2021年

Up to now, we have been researching methods for measuring the simulation parameters of EUV resist. These parameters include the development parameter, the Dill C parameter, the diffusion length of acid generated from PAG, and the deprotection reac...

Fundamental Evaluation of Resist on EUV Lithography at NewSUBARU Synchrotron Light Facility

Takeo Watanabe Tetsuo Harada Shinji Yamakawa

JOURNAL OF PHOTOPOLYMER SCIENCE AND TECHNOLOGY 34(1) 49-53 2021年

Extreme ultraviolet lithography was started to use for the production of 7-nm node-logic-semiconductor devices in 2019. And it was adapted to use for high volume manufacturing (HVM) of 5-nm logic devices in 2020. EUVL is required to be extended to...