Jun Tanaka   Takuma Ishiguro   Tetsuo Harada   Takeo Watanabe   
Journal of Photopolymer Science and Technology 32(2) 327-331 2019年 [査読有り]
© 2019 SPST. The resist development is a critical issue in EUV lithography for high volume manufacturing of semiconductor devices. Especially, the resist should have low line-width roughness (LWR) performance in fine patterning. To reduce the LWR,...