原田哲男

研究者氏名	原田哲男
	ハラダテツヲ
URL
所属	兵庫県立大学
部署	高度産業科学技術研究所
職名	教授
学位	博士（工学）
J-Global ID	201801018052844104

研究キーワード

EUVリソグラフィー ,軟Ｘ線光工学

研究分野

エネルギー / 量子ビーム科学 /

経歴

12 >

2024年4月

現在

兵庫県立大学高度産業科学技術研究所所長

2024年4月

現在

兵庫県立大学高度産業科学技術研究所教授

2019年4月

2024年3月

兵庫県立大学高度産業科学技術研究所准教授

2008年10月

2019年3月

兵庫県立大学高度産業科学技術研究所助教

2008年4月

2008年9月

東北大学多元物質科学研究所教育研究支援者

学歴

2003年10月

2007年3月

東北大学大学院工学研究科応用物理学専攻博士課程後期３年の課程

2001年4月

2003年9月

東北大学大学院工学研究科応用物理学専攻博士課程前期２年の課程

1997年4月

2001年3月

東北大学工学部

論文

<5 678 9 >

A Study on Enhancing EUV Resist Sensitivity (2)

Atsushi Sekiguchi Yoko Matsumoto Mariko Isono Michiya Naito Yoshiyuki Utsumi Tetsuo Harada Takeo Watanabe

EXTREME ULTRAVIOLET (EUV) LITHOGRAPHY IX 10583 2018年 [査読有り]

To improve EUV resist sensitivity, studies have sought to enhance EUV light absorption by adding metals characterized by high EUV light absorption to the resist polymer. This approach is intended to increase secondary electron emission, thereby en...

Reflectance measurement of EUV mirrors with s- and p- polarized light using polarization control units

Tetsuo Harada Takeo Watanabe

Proceedings of SPIE - The International Society for Optical Engineering 10809 2018年 [査読有り]

Copyright © 2018 SPIE. We have developed the reflectometer to evaluate EUV mirrors and masks at BL-10 beamline of NewSUBARU synchrotron light facility. This reflectometer usually measures s-polarized reflectance. Reflectance of an EUV mirror is st...

Development of absorption-coefficient-measurement method of EUV resist by direct-resist coating on a photodiode

Shota Niihara Tetsuo Harada Takeo Watanabe

Proceedings of SPIE - The International Society for Optical Engineering 10809 2018年 [査読有り]

Copyright © 2018 SPIE. The resist thickness of EUV lithography is thin less than 50 nm. Since the most photon is not absorbed by the resist, the EUV chemical reaction is not occurred sufficiently. In order to increase chemical reaction, a resist s...

Fabrication of high-aspect-ratio transmission grating using DDR process for 10-nm EUV resist evaluation by EUV interference lithography

Mana Yoshifuji Shota Niihara Tetsuo Harada Takeo Watanabe

Journal of Photopolymer Science and Technology 31(2) 215-220 2018年 [査読有り]

© 2018, Tokai University. All rights reserved. EUV lithography will be used as high volume manufacturing of semiconductor devices after 2020, where the half pitch of the devices is 10 nm. EUV interference lithography (EUV-IL) has been developed fo...

Imaging performance improvement of coherent extreme-ultraviolet scatterometry microscope with high-harmonic-generation extreme-ultraviolet source

Daiki Mamezaki Tetsuo Harada Yutaka Nagata Takeo Watanabe

Japanese Journal of Applied Physics 56(6) 2017年6月 [査読有り]

© 2017 The Japan Society of Applied Physics. In extreme-ultraviolet (EUV) lithography, the development of a review apparatus for the EUV mask pattern at an exposure wavelength of 13.5nm is required. The EUV mask is composed of an absorber pattern ...