Kinya Goto Yoshihiro Oka Naohito Suzumura Ryuji Shibata Takahisa Furuhashi Masahiro Matsumoto Takeshi Kawamura Masazumi Matsuura Masahiko Fujisawa Koyu Asai
2011 IEEE International Interconnect Technology Conference and 2011 Materials for Advanced Metallization, IITC/MAM 2011 2011年 [査読有り]
In recent years, it has become more serious concern to achieve high reliability(EM, SM and TDDB) in Cu/Low-k interconnects. In this paper, we propose the simplest method to improve EM and SM reliability using the conventional SiCN deposition syste...
Japanese Journal of Applied Physics 49(5 PART 3) 2010年5月 [査読有り]
To reduce the effective dielectric constant (k ) value for 32nm node technology and beyond, the effects of a direct chemical mechanical polishing (CMP) process on porous low-k film without a protective cap layer were investigated. It was confirmed...
T. Seo Y. Oka K. Seo K. Goto H. Chibahara H. Korogi S. Suzuki M. Hamada N. Suzumura K. Tsukamoto A. Ueki T. Furuhashi D. Kodama S. Kido J. Izumitani K. Tomita E. Kobori A. Ikeda Y. Kawano T. Ueda
2010 IEEE International Interconnect Technology Conference, IITC 2010 2010年 [査読有り]
We have improved ELK film so that it is suitable for the processes used in fabricating Cu interconnects without using a dielectric protection layer for CMP, the so called "direct CMP process". The depth profile of the pore size in the film was suc...
Proceedings of the 2009 IEEE International Interconnect Technology Conference, IITC 2009 243-245 2009年 [査読有り]
In order to reduce the effective dielectric constant (keff) for the 32 nm technology node and beyond, Direct-CMP of a porous low-k film without a protective cap layer is required. However, the degradation of breakdown electric field (Ebd) has been...
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工学研究科