Yasushi Hotta Satoshi Ueoka Haruhiko Yoshida Koji Arafune Atsushi Ogura Shin-ichi Satoh
AIP ADVANCES 6(10) 2016年10月 [査読有り]
We investigated the room temperature growth of HfO2 layers on Si substrates by pulsed laser deposition under ultra-high vacuum conditions. The laser fluence (LF) during HfO2 layer growth was varied as a growth parameter in the experiments. X-ray p...
Norihiro Ikeno Taka-aki Katsumata Haruhiko Yoshida Koji Arafune Shin-ichi Satoh Toyohiro Chikyow Atsushi Ogura
JAPANESE JOURNAL OF APPLIED PHYSICS 55(4) 2016年4月 [査読有り]
We fabricated a Y2O3-ZrO2 film (YZO) on Al2O3 to achieve the field effect passivation with high negative fixed charge densities on p-type Si. The surface recombination velocity was improved down to 30cm/s after annealing at 400 degrees C. This imp...
JOURNAL OF CHEMICAL ENGINEERING OF JAPAN 48(10) 815-820 2015年10月 [査読有り]
The present study investigates the charge-discharge processes of a Plante lead-acid battery performed under atmospheric pressure and 10 MPa. The ampere-hour efficiency of the lead electrodes was substantially increased by the secondary formation o...
JOURNAL OF MOLECULAR LIQUIDS 209 1-5 2015年9月 [査読有り]
Anti-solvent crystallization from a ternary mixture was examined by an NpT ensemble molecular dynamics simulation. The co-solvent and anti-solvent effects were represented by the Lennard-Jones interaction energy parameter, epsilon(ij). The homogen...
Norihiro Ikeno Yoshihiro Yamashita Hiroshi Oji Shohei Miki Koji Arafune Haruhiko Yoshida Shin-ichi Satoh Ichiro Hirosawa Toyohiro Chikyow Atsushi Ogura
JAPANESE JOURNAL OF APPLIED PHYSICS 54(8) 2015年8月 [査読有り]
The passivation properties and band structures in aluminum oxide (AlOx) deposited by ozone-based atomic layer deposition (ALD) at room temperature on p-type crystalline silicon were investigated by X-ray photoelectron spectroscopy (XPS). The effec...
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工学研究科