JAPANESE JOURNAL OF APPLIED PHYSICS 54(8) 2015年8月 [査読有り]
Aluminum oxide (AlOx) films were deposited by mist chemical vapor deposition (MCVD) in air for p-type crystalline silicon, and the effects of the deposition temperature (T-dep) and AlOx film thickness on the maximum surface recombination velocitie...
Hyunju Lee   Keigo Ueda   Yuya Enomoto   Koji Arafune   Haruhiko Yoshida   Shin-ichi Satoh   Toyohiro Chikyow   Atsushi Ogura   
JAPANESE JOURNAL OF APPLIED PHYSICS 54(8) 2015年8月 [査読有り]
Recently, excellent surface passivation has been achieved for both p- and n-type silicon solar cells using AlOx/SiNx:H stacks deposited by atomic layer deposition and plasma-enhanced chemical vapor deposition. However, alternative materials and de...
We fabricated Y2O3-ZrO2 composition film (YZO) on Al2O3 for the field effect passivation with high negative fixed charge densities on p-type Si. The surface recombination velocity was improved down to 30 cm/s after annealing at 400 degrees C. High...
JAPANESE JOURNAL OF APPLIED PHYSICS 53(11) 112401.1-112401.3 2014年11月 [査読有り]
The photoluminescence properties of small-angle grain boundaries (SA-GBs) with various misorientation angles were evaluated before and after Fe contamination. Comparison of SA-GBs with the same misohentation angle showed that the D-a1 band at 0.78...