In this paper, preliminary irradiation effects of glancing incidence gas cluster ion beam (GCIB) for surface activated bonding are reported. Unique irradiation effects of GCIB, such as low-damage irradiation and surface smoothing effects, might be...
2016 IEEE 16TH INTERNATIONAL CONFERENCE ON NANOTECHNOLOGY (IEEE-NANO) 381-382 2016年 [査読有り]
Crater formations with gas cluster ion beam (GCIB) were used for non-contact hardness measurement of thin films. The crater inner diameter formed with size-selected Ar cluster ions decreased with inverse cube root of film hardness. When the total ...
2016 21ST INTERNATIONAL CONFERENCE ON ION IMPLANTATION TECHNOLOGY (IIT) 2016年 [査読有り]
Gas cluster ion beam (GCIB) was used for surface activation bonding (SAB). Since GCIB modifies only near surface, low-damage surface modification and activation are expected. In this study, Cu-Cu bonding with GCIB irradiation was selected as a pre...
2016 21ST INTERNATIONAL CONFERENCE ON ION IMPLANTATION TECHNOLOGY (IIT) 2016年 [査読有り]
In this study, we investigated surface modification of poly ether ether ketone (PEEK) with gas cluster ion beam(GCIB) irradiation. Since GCIB induces high energy density on the irradiated surface, only surface layer is physically or chemically mod...
2016 21ST INTERNATIONAL CONFERENCE ON ION IMPLANTATION TECHNOLOGY (IIT) 2016年 [査読有り]
Low-temperature formation of graphene films with ethane gas cluster ion beam (GCIB) implantations were investigated. Ethane GCIBs realize both shallow carbon implantation and creation of high temperature and high pressure conditions simultaneously...
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