S Inoue   H Uchida   T Ohba   K Koterazawa   A Chayahara   M Terasawa   
JOURNAL OF THE JAPAN INSTITUTE OF METALS 61(10) 1108-1114 1997年10月
The process of rf reactive magnetron sputtering is suitable for depositing TiN films, because of its applicability for large-area processing. This process, however, shows the so-called hysteresis when the reactive gas is controlled by constant flo...