HEYA Akira   MATSUO Naoto   KANDA Kazuhiro   
IEICE Transactions on Electronics E99.C(4) 474-480 2016年 [査読有り]
A novel activation method for a B dopant implanted in a Si substrate using a soft X-ray undulator was examined. As the photon energy of the irradiated soft X-ray approached the energy of the core level of Si 2p, the activation ratio increased. The...