Martin Setvin   Veronika Brazdova   David R. Bowler   Kota Tomatsu   Kan Nakatsuji   Fumio Komori   Kazushi Miki   
PHYSICAL REVIEW B 84(11) 2011年9月 [査読有り]
The electronic structure of the Si(110)-(16 x 2) surface was studied by scanning tunneling microscopy at room temperature (RT) and at 78 K. A combination of point tunneling spectroscopy measurements and local density of states mappings reveal deta...
We propose a new method of creating light-emitting point defects, or G-centers, by modifying a silicon surface with hexamethyldisilazane followed by laser annealing of the surface region. This laser annealing process has two advantages: creation o...
SrTiO3(100)-(root 5 x root 5)-R26.6 surfaces were studied by means of high-resolution scanning tunneling microscopy (STM) under ultrahigh vacuum conditions. By varying the bias voltage in the occupied state, it was possible to observe the arrangem...
H. J. Liu   J. H G Owen   K. Miki   C. H. Renner   
Journal of Physics Condensed Matter 23(17) 2011年5月 [査読有り]
A method for promoting the growth of manganese silicide nanowires on Si(001) at 450 °C is described. The anisotropic surface stress generated by bismuth nanolines blocks the formation of embedded structures and stabilizes the nucleation of mangane...