Naoto Matsuo   Naoki Yoshioka   Akira Heya   
JAPANESE JOURNAL OF APPLIED PHYSICS 56(8) 085505 2017年8月 [査読有り]
We examined the dynamics of interstitial atoms and vacancies in amorphous Si (a-Si) and a-Ge films crystallized by flash lamp annealing in consideration of the self-diffusion coefficients of Si and Ge. We found that the interstitial atoms play an ...
Hibiki Nakano   Naoto Matsuo   Tadao Takada   Kazushige Yamana   Akira Heya   Tadashi Sato   Shin Yokoyama   
IMFEDK 2017 - 2017 International Meeting for Future of Electron Devices, Kansai 32-33 2017年7月 [査読有り]
An input/output characteristics of the inverter composed of the DNA/Si-MOSFET and the parasitic capacity was studied. The DNA was bridged between the Si electrodes those serve as the source and drain with the 120nm-gap-length. At VDD=0V and VDD=3V...
Akira Heya   Fumito Kusakabe   Naoto Matsuo   Kazuhiro Kanda   Kazuyuki Kohama   Kazuhiro Ito   
JAPANESE JOURNAL OF APPLIED PHYSICS 56(3) 035501 2017年3月 [査読有り]
The low-temperature formation of nanocrystalline Si (nc-Si) in SiOx film is one of the key technologies in the realization of Si-based photonics and memories. We proposed a low-temperature nc-Si formation method with soft X-ray irradiation. The nc...
Atomic hydrogen annealing (AHA) was investigated as a novel method to reduce graphene oxide (GO). In this method, high-density atomic hydrogen is generated on a hot tungsten (W) surface through a catalytic cracking reaction. The X-ray photoelectro...