Two types of phenylenevinylene terthiophene with and without cyano side substitution were synthesized to investigate the effect of the molecular structure on optoelectronic properties. The oligothiophene with cyano side substitution exhibited larg...
Kohei Ohki Takashi Kusakabe Naoto Matsuo Akira Heya
2015 IEEE INTERNATIONAL MEETING FOR FUTURE OF ELECTRON DEVICES, KANSAI (IMFEDK) 2015年 [査読有り]
We presented the novel structure of the solar cell that has the metal-oxide-semiconductor (MOS) diode at the side wall of the power generation layer (1). The purpose of this research is to simulate influence of the field-effect on the recombinatio...
2015 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) 99-102 2015年 [査読有り]
Ge thin film is expected as an active layer in a thin-film transistor (TFT) because the electron mobility of Ge is larger than that of Si. In this study, the crystallization of Ge thin film by soft X-ray irradiation and the improvement of interfac...
Mizuho Kondo Takao Nakanishi Akira Heya Naoto Matsuo Nobuhiro Kawatsuki
2015 22nd International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) 155-158 2015年 [査読有り]
Molecular alignment behavior of pentacene molecules sublimed on photoreactive liquid-crystalline polymer (PLCP) layer that are work as a photoalignment layer were explored. Pentacene molecule aligned perpendicular to the director of PLCP with edge...
Takahiro Kobayashi Naoto Matsuo Akira Heya Shin Yokoyama
IEICE TRANSACTIONS ON ELECTRONICS E97C(11) 1112-1116 2014年11月 [査読有り]
It is clarified that the SiNX film with a thickness of 1.7 nm, which was formed at the interface between the poly-Si source/drain and Al layer, suppresses the hump phenomenon of TFT with a channel length of 10 mu m. The mechanism of the hump suppr...
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