Naoto Matsuo   Shyogo Takagi   Kazushige Yamana   Akira Heya   Tadao Takada   Shin Yokoyama   
JAPANESE JOURNAL OF APPLIED PHYSICS 51(4) 04DD13 2012年4月 [査読有り]
We discovered the charge retention property of the field-effect transistor (FET) in a Si gate/SiO2/DNA channel structure. The DNA FET with the Si source and drain showed hole conduction, and the drain current was controlled by the gate voltage app...