Shohei Miki Koji Iguchi Sho Kitano Koki Hayakashi Yasushi Hotta Haruhiko Yoshida Atsushi Ogura Shin-ichi Satoh Koji Arafune
JAPANESE JOURNAL OF APPLIED PHYSICS 54(8) 08KD25 2015年8月 [査読有り]
Aluminum oxide (AlOx) films were deposited by mist chemical vapor deposition (MCVD) in air for p-type crystalline silicon, and the effects of the deposition temperature (T-dep) and AlOx film thickness on the maximum surface recombination velocitie...
Norihiro Ikeno Yoshihiro Yamashita Hiroshi Oji Shohei Miki Koji Arafune Haruhiko Yoshida Shin-ichi Satoh Ichiro Hirosawa Toyohiro Chikyow Atsushi Ogura
JAPANESE JOURNAL OF APPLIED PHYSICS 54(8) 08KD19 2015年8月 [査読有り]
The passivation properties and band structures in aluminum oxide (AlOx) deposited by ozone-based atomic layer deposition (ALD) at room temperature on p-type crystalline silicon were investigated by X-ray photoelectron spectroscopy (XPS). The effec...
Hyunju Lee Keigo Ueda Yuya Enomoto Koji Arafune Haruhiko Yoshida Shin-ichi Satoh Toyohiro Chikyow Atsushi Ogura
JAPANESE JOURNAL OF APPLIED PHYSICS 54(8) 08KD18 2015年8月 [査読有り]
Recently, excellent surface passivation has been achieved for both p- and n-type silicon solar cells using AlOx/SiNx:H stacks deposited by atomic layer deposition and plasma-enhanced chemical vapor deposition. However, alternative materials and de...
We fabricated Y2O3-ZrO2 composition film (YZO) on Al2O3 for the field effect passivation with high negative fixed charge densities on p-type Si. The surface recombination velocity was improved down to 30 cm/s after annealing at 400 degrees C. High...
We investigated stacking double layer structure, the Y2O3-ZrO2 composite film (YZO) on AlOx, for the field effect passivation with high negative fixed charge densities on p-type Si. The composition spread YZO films were deposited at room temperatu...
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