Koji Arafune   Shohei Miki   Ryosuke Matsutani   Junpei Hamano   Haruhiko Yoshida   Tomihisa Tachibana   Hyun Ju Lee   Atsuhi Ogura   Yoshio Ohshita   Shin-ichi Satoh   
JAPANESE JOURNAL OF APPLIED PHYSICS 51(4) 04DP06 2012年4月 [査読有り]
AlOx films as passivation layers for p-type crystalline silicon were prepared by atomic layer deposition with ozone as an oxidant, and the effects of the AlOx film thickness and deposition temperature on the maximum recombination velocity (S-max) ...
N. Ikeno   T. Tachibana   H. Lee   H. Yoshida   K. Arafune   S. Satoh   T. Chikyow   A. Ogura   
DEFECTS-RECOGNITION, IMAGING AND PHYSICS IN SEMICONDUCTORS XIV 725 161-+ 2012年 [査読有り]
We investigated the new materials applicable for the field effect passivation layer in crystalline Si solar cells, ZrO2-Al2O3 and ZrO2-Y2O3 binary systems, by using combinatorial synthesis method. As-deposited samples indicated hysteresis curves a...
JAPANESE JOURNAL OF APPLIED PHYSICS 50(4) 04DP09 2011年4月 [査読有り]
We evaluated the three types of composition spread passivation layer, i.e., Al2O3-HfO2, HfO2-Y2O3, and Al2O3-Y2O3 systems, by combinatorial pulsed laser deposition to evaluate and control the fixed charge, while interface states were kept constant...
J. Fujieda   R. Matsutani   J. Hamano   H. Yoshida   K. Arafune   S. Satoh   T. Tachibana   N. Ikeno   H. Lee   A. Ogura   T. Chikyow   
IMFEDK 2011 - 2011 International Meeting for Future of Electron Devices, Kansai 74-75 2011年 [査読有り]
A scanning capacitance microscopy (SCM) has been applied to the electrical characterization of passivation films for crystalline Si solar cells. An Y 2O3-Al2O3 system, which is a binary composition spread oxide film, was used as a fixed-charge-con...