神田 健介

Abstract We investigated the relationship between the polarization characteristics of ferroelectric Hf_0.5Zr_0.5O₂ thin-films and data processing capability in physical reservoir computing. Ferroelectric-gate field-effect transistors (FeFETs) with a metal-ferroelectric-metal-insulator-semiconductor structure were employed with varying area ratios between the ferroelectric capacitors and floating gate-electrodes. The voltage applied to the ferroelectric layers was theoretically calculated using load line analysis and determined experimentally. In a time-series prediction task, the FeFETs showed low error rates under conditions that produced multiple hysteresis loops in dynamic transfer waveforms. The results indicate that data processing capability is improved when a substantial portion of polarization is switched.