Applied Physics Express, 18(8) 081001-081001, Aug 1, 2025 Peer-reviewed
Abstract
We investigated the relationship between the polarization characteristics of ferroelectric Hf0.5Zr0.5O2 thin-films and data processing capability in physical reservoir computing. Ferroelectric-gate field-effect transistors (FeFETs) with a metal-ferroelectric-metal-insulator-semiconductor structure were employed with varying area ratios between the ferroelectric capacitors and floating gate-electrodes. The voltage applied to the ferroelectric layers was theoretically calculated using load line analysis and determined experimentally. In a time-series prediction task, the FeFETs showed low error rates under conditions that produced multiple hysteresis loops in dynamic transfer waveforms. The results indicate that data processing capability is improved when a substantial portion of polarization is switched.
The 12th International Conference on Miniaturized Systems for Chemistry and Life Sciences [MicroTAS2008], pp. 1387-1389, San Diego, USA, Oct,12-16,, 1387-1389, Jan 1, 2008